Inventor · Boise, ID, US

Scott J. Derner

188Patents
17h-index
38Co-inventors
86Inventor score

Filing activity: Sep 11, 1997 → Feb 19, 2024

Most-cited inventions

PatentTitleAreaCited byStatus
US9858979B1 Reprogrammable non-volatile ferroelectric latch for use with a memory controller Physics 86 Active
US10354712B2 Ferroelectric memory cells Physics 70 Active
US9786348B1 Dynamic adjustment of memory cell digit line capacitance Physics 51 Active
US6781867B2 Embedded ROM device using substrate leakage Electricity 37 Expired
US6834022B2 Partial array self-refresh Physics 36 Expired
US6545899B1 ROM embedded DRAM with bias sensing Physics 32 Expired
US10153018B2 Ferroelectric memory cells Physics 32 Active
US9715919B1 Array data bit inversion Physics 26 Active
US6580631B1 256 Meg dynamic random access memory Electricity 26 Expired
US6134137A Rom-embedded-DRAM Electricity 26 Expired
US6243285A ROM-embedded-DRAM Electricity 24 Expired
US10074414B2 Apparatuses and methods including ferroelectric memory and for operating ferroelectric memory Electricity 24 Active
US10157926B2 Memory cells and memory arrays Electricity 22 Active
US10163480B1 Periphery fill and localized capacitance Electricity 21 Active
US10127965B2 Apparatuses and methods including ferroelectric memory and for accessing ferroelectric memory Physics 17 Active
US6192446A Memory device with command buffer Physics 17 Expired
US10127972B2 Apparatuses and methods including two transistor-one capacitor memory and for accessing same Electricity 17 Active
US5896337A Circuits and methods for multi-level data through a single input/ouput pin Physics 14 Expired
US9786347B1 Cell-specific reference generation and sensing Physics 14 Active
US9734886B1 Cell-based reference voltage generation Physics 13 Active
US6696867B2 Voltage generator with stability indicator circuit Electricity 13 Expired
US6515925B2 Balanced sense amplifier control for open digit line architecture memory devices Physics 12 Expired
US7245548B2 Techniques for reducing leakage current in memory devices Physics 12 Expired
US6785167B2 ROM embedded DRAM with programming Physics 11 Expired
US10431283B2 Apparatuses and methods including ferroelectric memory and for accessing ferroelectric memory Physics 11 Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.