Patent · US Active

Semiconductor device and methods for forming a plurality of semiconductor devices

US10074566B2 · kind B2 · utility

0Cited by

4References

32Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Johannes Baumgartl · Arnoldstein, AT
Manfred Engelhardt · Feldkirchen-Westerham, DE
Oliver Hellmund · Straubing, DE
Iris Moder · Villach, AT
Ingo Muri · Villach, AT

Key dates

Filing date	May 16, 2017
Grant date	Sep 11, 2018
Priority date	—
Expiry date	May 16, 2037

Classification

Technology area (CPC H)Electricity
CPC primaryH10D84/01
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A method for forming a plurality of semiconductor devices includes forming a plurality of trenches extending from a first lateral surface of a semiconductor wafer towards a second lateral surface of the semiconductor wafer. The method further includes filling a portion of the plurality of trenches with filler material. The method further includes thinning the semiconductor wafer from the second lateral surface of the semiconductor wafer to form a thinned semiconductor wafer. The method further includes forming a back side metallization layer structure on a plurality of semiconductor chip regions of the semiconductor wafer after thinning the semiconductor wafer. The method further includes removing a part of the filler material from the plurality of trenches after forming the back side metallization layer structure to obtain the plurality of semiconductor devices.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.