Low resistivity wrap-around contacts
US10074727B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 29, 2016 |
| Grant date | Sep 11, 2018 |
| Priority date | — |
| Expiry date | Nov 24, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/85
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Low resistivity, wrap-around contact structures are provided in nanosheet devices, vertical FETs, and FinFETs. Such contact structures are obtained by delivering dopants to source/drain regions using a highly conformal, doped metal layer. The conformal, doped metal layer may be formed by ALD or CVD using a titanium tetraiodide precursor. Dopants within the conformal, doped metal layer are delivered during the formation of wrap-around metal silicide or metal germano-silicide regions. Dopant segregation at silicide/silicon interfaces or germano-silicide/silicon interfaces reduces contact resistance in the wrap-around contact structures. A contact metal layer electrically communicates with the wrap-around contact structures.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.