Surface devices within a vertical power device
US10074735B2 · kind B2 · utility
1Cited by
3References
17Claims
0Family size
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Key dates
| Filing date | Sep 1, 2017 |
| Grant date | Sep 11, 2018 |
| Priority date | — |
| Expiry date | Sep 1, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/601
Abstract
A semiconductor device comprises a vertical power device, such as a superjunction MOSFET, an IGBT, a diode, and the like, and a surface device that comprises one or more lateral devices that are electrically active along a top surface of the semiconductor device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.