Semiconductor device having electric field near drain electrode alleviated
US10074739B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 22, 2016 |
| Grant date | Sep 11, 2018 |
| Priority date | — |
| Expiry date | Aug 22, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/693
Abstract
A semiconductor device includes a first nitride semiconductor layer, a second nitride semiconductor layer containing aluminum located on the first nitride semiconductor layer, one or more nitride layers containing aluminum located on the second nitride semiconductor layer, a source electrode located on the second nitride semiconductor layer, a drain electrode located on one of the second nitride semiconductor layer or the nitride layer, and a gate electrode located between the source electrode and the drain electrode. An end of the nitride layer on the source electrode side thereof is located between the gate electrode and the drain electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.