Layer structures for RF filters fabricated using rare earth oxides and epitaxial aluminum nitride
US10075143B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 2, 2016 |
| Grant date | Sep 11, 2018 |
| Priority date | — |
| Expiry date | Nov 2, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03H2003/025
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
Layer structures for RF filters can be fabricated using rare earth oxides and epitaxial aluminum nitride, and methods for growing the layer structures. A layer structure can include an epitaxial crystalline rare earth oxide (REO) layer over a substrate, a first epitaxial electrode layer over the crystalline REO layer, and an epitaxial piezoelectric layer over the first epitaxial electrode layer. The layer structure can further include a second electrode layer over the epitaxial piezoelectric layer. The first electrode layer can include an epitaxial metal. The epitaxial metal can be single-crystal. The first electrode layer can include one or more of a rare earth pnictide, and a rare earth silicide (RESi).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.