Inventor · Greensboro, NC, US

Rytis Dargis

39Patents
6h-index
15Co-inventors
62Inventor score

Filing activity: Mar 22, 2011 → May 2, 2022

Most-cited inventions

PatentTitleAreaCited byStatus
US8796121B1 Stress mitigating amorphous SiO2 interlayer Electricity 14 Active
US8846504B1 GaN on Si(100) substrate using epi-twist Electricity 11 Active
US8501635B1 Modification of REO by subsequent III-N EPI process Electricity 8 Active
US8633569B1 AlN inter-layers in III-N material grown on REO/silicon substrate Electricity 7 Active
US8878188B2 REO gate dielectric for III-N device on Si substrate Electricity 7 Active
US8748900B1 Re-silicide gate electrode for III-N device on Si substrate Electricity 7 Active
US8636844B1 Oxygen engineered single-crystal REO template Electricity 6 Active
US8394194B1 Single crystal reo buffer on amorphous SiOx Electricity 5 Active
US8823055B2 REO/ALO/A1N template for III-N material growth on silicon Electricity 5 Active
US10605987B2 Re-based integrated photonic and electronic layered structures Electricity 4 Active
US9142406B1 III-N material grown on ErAlN buffer on Si substrate Electricity 3 Active
US8680507B1 A1N inter-layers in III-N material grown on DBR/silicon substrate Electricity 3 Active
US10566944B2 Layer structures for RF filters fabricated using rare earth oxides and epitaxial aluminum nitride Electricity 2 Active
US8872308B2 AlN cap grown on GaN/REO/silicon substrate structure Electricity 2 Active
US10075143B2 Layer structures for RF filters fabricated using rare earth oxides and epitaxial aluminum nitride Electricity 2 Active
US8823025B1 III-N material grown on AIO/AIN buffer on Si substrate Electricity 1 Active
US11063114B2 III-N to rare earth transition in a semiconductor structure Electricity 1 Active
US9917193B2 III-N semiconductor layer on Si substrate Electricity 1 Active
US8835955B2 IIIOxNy on single crystal SOI substrate and III n growth platform Electricity 1 Active
US9496132B2 Nucleation of III-N on REO templates Electricity 1 Active
US10615141B2 Pnictide buffer structures and devices for GaN base applications Electricity 0 Active
US8994032B2 III-N material grown on ErAIN buffer on Si substrate Electricity 0 Active
US9824886B2 Stress mitigating amorphous SiO2 interlayer Electricity 0 Active
US9139934B2 REN semiconductor layer epitaxially grown on REAIN/REO buffer on Si substrate Electricity 0 Active
US8664735B2 IR sensor using REO up-conversion Emerging Cross-Sectional Technologies 0 Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.