Method of forming semiconductor device having wick structure
US10079143B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 29, 2017 |
| Grant date | Sep 18, 2018 |
| Priority date | — |
| Expiry date | Jun 29, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/215
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device and a method of forming the same, the semiconductor device includes fin shaped structures and a recessed insulating layer. The fin shaped structures are disposed on a substrate. The recessed insulating layer covers a bottom portion of each of the fin shaped structures to expose a top portion of each of the fin shaped structures. The recessed insulating layer has a curve surface and a wicking structure is defined between a peak and a bottom of the curve surface. The wicking structure is disposed between the fin shaped structures and has a height being about 1/12 to 1/10 of a height of the top portion of the fin shaped structures.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.