Methods of forming self-aligned vias

US10083834B2 · kind B2 · utility

Assignee

• Applied Materials, Inc. · US

Inventors

• David Thompson · San Jose, US
• Benjamin Schmiege · Santa Clara, US
• Jeffrey W. Anthis · San Jose, US
• Abhijit Basu Mallick · Palo Alto, US
• Susmit Singha Roy · Mountain View, US
• Ziqing Duan · Sunnyvale, US

Key dates

• Filing date: Sep 28, 2017
• Grant date: Sep 25, 2018
• Expiry date: Sep 28, 2037

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/76897
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

Processing methods comprising selectively orthogonally growing a first material through a mask to provide an expanded first material are described. The mask can be removed leaving the expanded first material extending orthogonally from the surface of the first material. Further processing can create a self-aligned via.