Patent · US Active

Gate cut method

US10083874B1 · kind B1 · utility

23Cited by

0References

18Claims

0Family size

Assignee

GlobalFoundries Inc. · KY

Inventors

Hong Yu · Rexford, US
Zhenyu Hu · Leonberg, DE
Haiting Wang · Clifton Park, US

Key dates

Filing date	Mar 23, 2017
Grant date	Sep 25, 2018
Priority date	—
Expiry date	Mar 23, 2037

Classification

Technology area (CPC H)Electricity
CPC primaryH10D84/0179
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A method of manufacturing a FinFET structure involves forming gate cuts within a sacrificial gate layer prior to patterning and etching the sacrificial gate layer to form longitudinal sacrificial gate structures. By forming transverse cuts in the sacrificial gate layer before defining the sacrificial gate structures longitudinally, dimensional precision of the gate cuts at lower critical dimensions can be improved.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.