Cross-point memory and methods for fabrication of same

US10084016B2 · kind B2 · utility

Assignee

• Micron Technology, Inc. · US

Inventors

• Ombretta Donghi · Arcore, IT
• Marcello Ravasio · Merate, IT
• Samuele Sciarrillo · Merate, IT
• Roberto Somaschini · Vimercate, IT

Key dates

• Filing date: Nov 21, 2013
• Grant date: Sep 25, 2018
• Expiry date: Jun 2, 2034

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10N70/8828

Abstract

A method of fabricating a memory device is disclosed. In one aspect, the method comprises patterning a first conductive line extending in a first direction. The method additionally includes forming a free-standing pillar of a memory cell stack on the first conductive line after patterning the first conductive line. Forming the free-standing pillar includes depositing a memory cell stack comprising a selector material and a storage material over the conductive line and patterning the memory cell stack to form the free-standing pillar. The method further includes patterning a second conductive line on the pillar after patterning the memory cell stack, the second conductive line extending in a second direction crossing the first direction.