MOSFET active area and edge termination area charge balance
US10084037B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 31, 2016 |
| Grant date | Sep 25, 2018 |
| Priority date | — |
| Expiry date | Oct 31, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/118
Abstract
A method for fabricating a MOSFET having an active area and an edge termination area is disclosed. The method includes forming a first plurality of implants at the bottom of trenches located in the active area and in the edge termination area. A second plurality of implants is formed at the bottom of the trenches located in the active area. The second plurality of implants formed at the bottom of the trenches located in the active area causes the implants formed at the bottom of the trenches located in the active area to reach a predetermined concentration. In so doing, the breakdown voltage of both the active and edge termination areas can be made similar and thereby optimized while maintaining advantageous RDson.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.