Inventor · San Jose, CA, US

Qufei Chen

20Patents

8h-index

19Co-inventors

68Inventor score

Filing activity: Mar 26, 2004 → Jul 25, 2017

Most-cited inventions

Patent	Title	Area	Cited by	Status
US7795675B2	Termination for trench MIS device	Electricity	92	Expired
US7544545B2	Trench polysilicon diode	Electricity	20	Active
US7045857B2	Termination for trench MIS device having implanted drain-drift region	Electricity	17	Expired
US9425304B2	Transistor structure with improved unclamped inductive switching immunity	Electricity	12	Active
US9443974B2	Super junction trench power MOSFET device fabrication	Electricity	10	Active
US9425306B2	Super junction trench power MOSFET devices	Electricity	9	Active
US9431550B2	Trench polysilicon diode	Electricity	8	Active
US8409954B2	Ultra-low drain-source resistance power MOSFET	Electricity	8	Expired
US9716166B2	Transistor structure with improved unclamped inductive switching immunity	Electricity	4	Active
US7268032B2	Termination for trench MIS device having implanted drain-drift region	Electricity	4	Expired
US9431530B2	Super-high density trench MOSFET	Electricity	3	Active
US9484451B2	MOSFET active area and edge termination area charge balance	Electricity	2	Active
US9306056B2	Semiconductor device with trench-like feed-throughs	Electricity	2	Active
US7612431B2	Trench polysilicon diode	Electricity	1	Active
US9722041B2	Breakdown voltage blocking device	Electricity	1	Active
US8072013B1	Trench polysilicon diode	Electricity	1	Active
US10084037B2	MOSFET active area and edge termination area charge balance	Electricity	0	Active
US10181523B2	Transistor structure with improved unclamped inductive switching immunity	Electricity	0	Active
US9887266B2	Ultra-low drain-source resistance power MOSFET	Electricity	0	Active
US10032901B2	Semiconductor device with trench-like feed-throughs	Electricity	0	Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.