NVM device in SOI technology and method of fabricating an according device

US10084057B2 · kind B2 · utility

Assignee

• GlobalFoundries Inc. · KY

Inventors

• Sven Beyer · Dresden, DE
• Martin Trentzsch · Dresden, DE
• Stefan Flachowsky · Dresden, DE
• Axel Henke · Medingen, DE

Key dates

• Filing date: Aug 16, 2016
• Grant date: Sep 25, 2018
• Expiry date: Jan 13, 2037

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D84/038
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

The present disclosure provides in one aspect a semiconductor device including a substrate structure comprising an active semiconductor material formed over a base substrate and a buried insulating material formed between the active semiconductor material and the base substrate, a ferroelectric gate structure disposed over the active semiconductor material in an active region of the substrate structure, the ferroelectric gate structure comprising a gate electrode and a ferroelectric material layer, and a contact region formed in the base substrate under the ferroelectric gate structure.