Patent · US Active

Apparatuses and methods including memory access in cross point memory

US10090050B2 · kind B2 · utility

4Cited by

23References

20Claims

0Family size

Assignee

Micron Technology, Inc. · US

Inventors

Derchang Kau · Cupertino, US
Gianpaolo Spadini · Scotts Valley, US

Key dates

Filing date	Feb 26, 2018
Grant date	Oct 2, 2018
Priority date	—
Expiry date	Feb 26, 2038

Classification

Technology area (CPC H)Electricity
CPC primaryH01L2924/0002
WIPO fieldComputer technology
WIPO sectorElectrical engineering

Abstract

Some embodiments include apparatuses and methods having a memory cell, first and second conductive lines configured to access the memory cell, and a switch configured to apply a signal to one of the first and second conductive lines. In at least one of such embodiments, the switch can include a phase change material. Other embodiments including additional apparatuses and methods are described.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.