Patent · US Active

Wafer and method for processing a wafer

US10090214B2 · kind B2 · utility

0Cited by

3References

27Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Gunther Mackh · Dresden, DE
Gerhard Leschik · Regensburg, DE
Maria Heidenblut · Schwarzenfeld, DE

Key dates

Filing date	Oct 15, 2012
Grant date	Oct 2, 2018
Priority date	—
Expiry date	Jun 29, 2036

Classification

Technology area (CPC H)Electricity
CPC primaryH01L2221/68336
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A wafer in accordance with various embodiments may include: at least one metallization structure including at least one opening; and at least one separation line region along which the wafer is to be diced, wherein the at least one separation line region intersects the at least one opening.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.