Oxide-based three-terminal resistive switching logic devices

US10090461B2 · kind B2 · utility

Assignee

• Intel Corporation · US

Inventors

• Elijah V. Karpov · Portland, US
• Prashant Majhi · San Jose, US
• Ravi Pillarisetty · Portland, US
• Brian S. Doyle · Portland, US
• Niloy Mukherjee · Beaverton, US
• Uday Shah · Portland, US
• Robert S. Chau · Beaverton, US

Key dates

• Filing date: Jun 26, 2014
• Grant date: Oct 2, 2018
• Expiry date: Jun 26, 2034

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10N70/8836

Abstract

Oxide-based three-terminal resistive switching logic devices and methods of fabricating oxide-based three-terminal resistive switching logic devices are described. In a first example, a three-terminal resistive switching logic device includes an active region disposed above a substrate. The active region includes an active oxide material region disposed directly between a metal source region and a metal drain region. The device also includes a gate electrode disposed above the active oxide material region. In a second example, a three-terminal resistive switching logic device includes an active region disposed above a substrate. The active region includes a first active oxide material region spaced apart from a second oxide material region. The device also includes metal input regions disposed on either side of the first and second active oxide material regions. A metal output region is disposed between the first and second active oxide material regions.