Patent · US Active

Gapfill film modification for advanced CMP and recess flow

US10096512B2 · kind B2 · utility

0Cited by

2References

6Claims

0Family size

Assignee

Applied Materials, Inc. · US

Inventors

Erica Chen · Cupertino, US
Ludovic Godet · Sunnyvale, US
Srinivas D. Nemani · Sunnyvale, US
Ellie Yieh · San Jose, US

Key dates

Filing date	Oct 11, 2016
Grant date	Oct 9, 2018
Priority date	—
Expiry date	Oct 11, 2036

Classification

Technology area (CPC H)Electricity
CPC primaryH01L21/76828
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

Implementations described herein relate to methods for forming gap fill materials. After the gap fill material is deposited and before a CMP process is performed on the gap fill material, one or more ion implantation processes are utilized to treat the deposited gap fill material. The one or more ion implantation processes include implanting a first ion species in the gap fill material using a first ion energy, and then implanting a second ion species in the gap fill material using a second ion energy that's lower than the first ion energy. The one or more ion implantation processes minimize CMP dishing and improve recess profile.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.