Chemistries for TSV/MEMS/power device etching

US10103031B2 · kind B2 · utility

Assignees

• L'Air Liquide, Societe Anonyme Pour l'Etude et l'Exploitation des Procedes Georges Claude · FR
• American Air Liquide, Inc. · US
• Air Liquide Electronics U.S. LP · US

Inventors

• Peng Shen · Beijing, CN
• Christian Dussarrat · Tokyo, JP
• Curtis Anderson · Largo, US
• Rahul Gupta · Santa Clara, US
• Vincent M. Omarjee · Grenoble, FR
• Nathan Stafford · Happy Valley, US

Key dates

• Filing date: Sep 8, 2017
• Grant date: Oct 16, 2018
• Expiry date: Sep 8, 2037

Classification

• Technology area (CPC C): Chemistry; Metallurgy
• CPC primary: C09K13/00
• WIPO field: Basic materials chemistry
• WIPO sector: Chemistry

Abstract

Replacement chemistries for the cC4F8 passivation gas in the Bosch etch process and processes for using the same are disclosed. These chemistries have the formula CxHyFz, with 1≤x<7, 1≤y≤13, and 1≤z≤13. The replacement chemistries may reduce RIE lag associated with deep silicon aperture etching.