Semiconductor structure including a trench capping layer

US10103224B2 · kind B2 · utility

Assignee

• GlobalFoundries Inc. · KY

Inventors

• Elliot John Smith · Dresden, DE
• Steffen Sichler · Dresden, DE

Key dates

• Filing date: Mar 13, 2017
• Grant date: Oct 16, 2018
• Expiry date: May 13, 2037

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D84/038
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A semiconductor structure includes a trench isolation structure and a trench capping layer positioned over the trench isolation structure, wherein the trench isolation layer includes a first electrically insulating material and the trench capping layer includes a second electrically insulating material that is different from the first electrically insulating material. The semiconductor structure also includes a gate structure having a gate insulation layer and a gate electrode positioned over the gate insulation layer, wherein the gate insulation layer includes a high-k material and the gate structure includes a first portion that is positioned over the trench capping layer. A sidewall spacer is positioned adjacent to the gate structure, wherein a portion of the sidewall spacer is positioned on the trench capping layer and contacts the trench capping layer laterally of the gate insulation layer.