Steffen Sichler
4Patents
1h-index
13Co-inventors
34Inventor score
Filing activity: Mar 31, 2016 → Nov 5, 2018
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US10756184B2 | Faceted epitaxial source/drain regions | Electricity | 1 | Active |
| US9876111B2 | Method of forming a semiconductor device structure using differing spacer widths and the resulting semiconductor device structure | Electricity | 0 | Active |
| US9633857B1 | Semiconductor structure including a trench capping layer and method for the formation thereof | Electricity | 0 | Active |
| US10103224B2 | Semiconductor structure including a trench capping layer | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.