Method to remove sidewall damage after MTJ etching
US10103322B1 · kind B1 · utility
3Cited by
7References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 22, 2017 |
| Grant date | Oct 16, 2018 |
| Priority date | — |
| Expiry date | Mar 22, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N50/10
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for etching a magnetic tunneling junction (MTJ) structure is described. A stack of MTJ layers on a bottom electrode on a wafer is provided. A hard mask layer is provided on the MTJ stack. The hard mask layer is patterned to form a hard mask. The MTJ stack is patterned to form a MTJ device wherein sidewall damage is formed on sidewalls of the MTJ device. The sidewall damage is removed by applying a CMP slurry which physically attacks and removes the sidewall damage on the MTJ device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.