Patent · US Active

Method for producing a superjunction device

US10109489B2 · kind B2 · utility

2Cited by

2References

26Claims

0Family size

Assignee

Infineon Technologies Austria AG · AT

Inventors

Anton Mauder · Kolbermoor, DE
Hans Weber · Villach, AT
Franz Hirler · Isen, DE
Johannes Georg Laven · Taufkirchen, DE
Hans-Joachim Schulze · Taufkirchen, DE
Werner Schustereder · Villach, AT
Maximilian Treiber · Munich, DE
Daniel Tutuc · Finkenstein, AT
Andreas Voerckel · Finkenstein, AT

Key dates

Filing date	Jul 13, 2017
Grant date	Oct 23, 2018
Priority date	—
Expiry date	Jul 13, 2037

Classification

Technology area (CPC H)Electricity
CPC primaryH10D62/157
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

Disclosed is a method that includes forming a plurality of semiconductor arrangements one above the other. In this method, forming each of the plurality of semiconductor arrangements includes: forming a semiconductor layer; forming a plurality of trenches in a first surface of the semiconductor layer; and implanting dopant atoms of at least one of a first type and a second type into at least one of a first sidewall and a second sidewall of each of the plurality of trenches of the semiconductor layer.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.