Semiconductor device including a porous dielectric layer, and method of forming the semiconductor device
US10109579B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 28, 2018 |
| Grant date | Oct 23, 2018 |
| Priority date | — |
| Expiry date | Feb 28, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2221/1047
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of forming a semiconductor device, includes forming a conductive layer in a recessed portion of a porous dielectric layer, partially removing a top portion of the conductive layer while maintaining a height of the porous dielectric layer, forming a conformal cap layer on the porous dielectric layer and the conductive layer in the recessed portion, polishing the conformal cap layer to form a gap in the conformal cap layer, such that an upper surface of the porous dielectric layer is exposed through the gap and an upper surface of the conductive layer is protected by the cap layer, and performing a heat treatment to burn out a pore filler of the porous dielectric layer through the exposed upper surface of the porous dielectric layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.