Methods for in-situ chamber clean in plasma etching processing chamber
US10115572B2 · kind B2 · utility
0Cited by
5References
16Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 26, 2016 |
| Grant date | Oct 30, 2018 |
| Priority date | — |
| Expiry date | Mar 24, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/32816
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
Embodiments of the disclosure include methods for in-situ chamber cleaning a plasma processing chamber utilized for photomask plasma fabrication process. In one embodiment, a method for in-situ chamber cleaning after a plasma process includes supplying a cleaning gas mixture including at least an oxygen containing gas and a hydrogen containing gas into the plasma processing chamber, controlling the processing pressure at less than 2 millitorr, applying a RF source power to the processing chamber to form a plasma from the cleaning gas mixture, and cleaning the processing chamber in the presence of the plasma.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.