Method and apparatus for wafer outgassing control
US10115607B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 16, 2016 |
| Grant date | Oct 30, 2018 |
| Priority date | — |
| Expiry date | May 2, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/677
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Embodiments disclosed herein generally relate to apparatus and methods for controlling substrate outgassing such that hazardous gasses are eliminated from a surface of a substrate after a Si:As process has been performed on a substrate, and prior to additional processing. The apparatus includes a purge station including an enclosure, a gas supply coupled to the enclosure, an exhaust pump coupled to the enclosure, a first purge gas port formed in the enclosure, a first channel operatively connected to the gas supply at a first end and to the first purge gas port at a second end, a second purge gas port formed in the enclosure, and a second channel operatively connected to the second purge gas port at a third end and to the exhaust pump at a fourth end. The first channel includes a particle filter, a heater, and a flow controller. The second channel includes a dry scrubber.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.