Large dynamic range RF voltage sensor and method for voltage mode RF bias application of plasma processing systems
US10121641B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 2, 2015 |
| Grant date | Nov 6, 2018 |
| Priority date | — |
| Expiry date | Nov 4, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/334
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A voltage sensor of a substrate processing system including a multi-divider circuit, a clamping circuit and first and second outputs. The multi-divider circuit receives a RF signal indicative of a RF voltage at a substrate. The multi-divider circuit includes dividers of respective channels and outputting first and second reduced voltages based on the received RF signal. The reduced voltages are less than the RF voltage. The clamping circuit clamps the first reduced voltage to a first predetermined voltage when the RF voltage is greater than a second predetermined voltage or the first reduced voltage is greater than a third predetermined voltage. While the received RF signal is in first and second voltage ranges, the first and second outputs output output signals based respectively on the first and second reduced voltages. The first predetermined voltage is based on a maximum value of the first voltage range.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.