Selective deposition of aluminum and nitrogen containing material
US10121699B2 · kind B2 · utility
20Cited by
53References
21Claims
0Family size
Assignee
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Key dates
| Filing date | Feb 14, 2017 |
| Grant date | Nov 6, 2018 |
| Priority date | — |
| Expiry date | Feb 14, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L23/53266
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods are provided for selectively depositing Al and N containing material on a first conductive surface of a substrate relative to a second, dielectric surface of the same substrate. In some aspects, methods of forming an Al and N containing protective layer or etch stop layer for use in integrated circuit fabrication are provided.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.