Harald Profijt
7Patents
4h-index
11Co-inventors
46Inventor score
Filing activity: Dec 29, 2016 → Jan 11, 2021
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US10236177B1 | Methods for depositing a doped germanium tin semiconductor and related semiconductor device structures | Electricity | 399 | Active |
| US10121699B2 | Selective deposition of aluminum and nitrogen containing material | Electricity | 20 | Active |
| US10553482B2 | Selective deposition of aluminum and nitrogen containing material | Electricity | 17 | Active |
| US10903113B2 | Selective deposition of aluminum and nitrogen containing material | Electricity | 15 | Active |
| US12040184B2 | Methods for forming a semiconductor structure and related semiconductor structures | Electricity | 0 | Active |
| US10141189B2 | Methods for forming semiconductors by diffusion | Electricity | 0 | Active |
| US10923344B2 | Methods for forming a semiconductor structure and related semiconductor structures | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.