High impedance RF filter for heater with impedance tuning device
US10125422B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 27, 2014 |
| Grant date | Nov 13, 2018 |
| Priority date | — |
| Expiry date | Nov 5, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/32724
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
Embodiments provide a plasma processing apparatus, substrate support assembly, and method of controlling a plasma process. The apparatus and substrate support assembly include a substrate support pedestal, a tuning assembly that includes a tuning electrode that is disposed in the pedestal and electrically coupled to a radio frequency (RF) tuner, and a heating assembly that includes one or more heating elements disposed within the pedestal for controlling a temperature profile of the substrate, where at least one of the heating elements is electrically coupled to an RF filter circuit that includes a first inductor configured in parallel with a formed capacitance of the first inductor to ground. The high impedance of the RF filters can be achieved by tuning the resonance of the RF filter circuit, which results in less RF leakage and better substrate processing results.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.