Patent · US Active

RF impedance model based fault detection

US10128090B2 · kind B2 · utility

6Cited by
106References
31Claims
0Family size

Assignee

Inventors

Key dates

Filing dateNov 13, 2014
Grant dateNov 13, 2018
Priority date
Expiry dateJun 6, 2036

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH05H2242/26
  • WIPO fieldElectrical machinery, apparatus, energy
  • WIPO sectorElectrical engineering

Abstract

A method to detect a potential fault in a plasma system is described. The method includes accessing a model of one or more parts of the plasma system. The method further includes receiving data regarding a supply of RF power to a plasma chamber. The RF power is supplied using a configuration that includes one or more states. The method also includes using the data to produce model data at an output of the model. The method includes examining the model data. The examination is of one or more variables that characterize performance of a plasma process of the plasma system. The method includes identifying the fault for the one or more variables. The method further includes determining that the fault has occurred for a pre-determined period of time such that the fault is identified as an event. The method includes classifying the event.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.