Semiconductor device including die bond pads at a die edge
US10128218B2 · kind B2 · utility
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4References
24Claims
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Assignee
Inventors
Key dates
| Filing date | Jun 22, 2017 |
| Grant date | Nov 13, 2018 |
| Priority date | — |
| Expiry date | Jun 22, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/3511
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device is disclosed that is formed with die bond pads at an edge of the semiconductor die. The die bond pads may be formed partially in a kerf area between semiconductor die on a wafer. When the wafer is diced, the die bond pads are severed along their length, leaving a portion of the die bond pads exposed at an edge of the diced semiconductor die. Having die bond pads at the edge of the die minimizes the offset between die when stacked into a package.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.