Integrated epitaxial metal electrodes
US10128350B2 · kind B2 · utility
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29Claims
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Key dates
| Filing date | Sep 21, 2017 |
| Grant date | Nov 13, 2018 |
| Priority date | — |
| Expiry date | Sep 21, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/691
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Systems and methods are described herein to include an epitaxial metal layer between a rare earth oxide and a semiconductor layer. Systems and methods are described to grow a layered structure, comprising a substrate, a first rare earth oxide layer epitaxially grown over the substrate, a first metal layer epitaxially grown over the rare earth oxide layer, and a first semiconductor layer epitaxially grown over the first metal layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.