Aqueous formulations for removing metal hard mask and post-etch residue with Cu/W compatibility
US10138117B2 · kind B2 · utility
8Cited by
73References
15Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 31, 2014 |
| Grant date | Nov 27, 2018 |
| Priority date | — |
| Expiry date | Jul 31, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/31144
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Compositions useful for the selective removal of titanium nitride and/or photoresist etch residue materials relative to metal conducting, e.g., tungsten, and insulating materials from a microelectronic device having same thereon. The removal compositions are low pH and contain at least one oxidizing agent and at least one etchant as well as corrosion inhibitors to minimize metal erosion and passivating agents to protect dielectric materials.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.