Method of producing a channel structure formed from a plurality of strained semiconductor bars
US10141424B2 · kind B2 · utility
2Cited by
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10Claims
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Key dates
| Filing date | May 24, 2017 |
| Grant date | Nov 27, 2018 |
| Priority date | — |
| Expiry date | May 24, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/017
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Method of manufacturing a structure with semiconducting bars suitable for forming one at least one transistor channel, including the following steps:
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.