System and method for increasing electron density levels in a plasma of a substrate processing system
US10147588B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 8, 2017 |
| Grant date | Dec 4, 2018 |
| Priority date | — |
| Expiry date | Feb 8, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/334
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A system is provided and includes a substrate processing chamber, one or more injectors, and a controller. The one or more injectors inject an electronegative gas, a baseline electropositive gas, and an additional electropositive gas into the substrate processing chamber. The electronegative gas includes an etch precursor. The additional electropositive gas mixes with and increases electron density of a plasma in the substrate processing chamber. The controller is configured to set an amount, flow rate or pressure of the additional electropositive gas based on at least one of a pressure of the electronegative gas or an electron affinity level of the additional electropositive gas.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.