Phase change memory electrode with multiple thermal interfaces
US10147876B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 31, 2017 |
| Grant date | Dec 4, 2018 |
| Priority date | — |
| Expiry date | Aug 31, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B63/845
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Systems and methods for providing a phase change memory that includes a phase change material, such as a chalcogenide material, in series with a heating element that comprises multiple thermal interfaces are described. The multiple thermal interfaces may cause the heating element to have a reduced bulk thermal conductivity or a lower heat transfer rate across the heating element without a corresponding reduction in electrical conductivity. The phase change material may comprise a germanium-antimony-tellurium compound or a chalcogenide glass. The heating element may include a plurality of conducting layers with different thermal conductivities. In some cases, the heating element may include two or more conducting layers in which the conducting layers comprise the same electrically conductive material or compound but are deposited or formed using different temperatures, carrier gas pressures, flow rates, and/or film thicknesses to create thermal interfaces between the two or more conducting layers.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.