Patent · US Active

Ferroelectric memory cells

US10153018B2 · kind B2 · utility

32Cited by

27References

35Claims

0Family size

Assignee

Micron Technology, Inc. · US

Inventors

Scott J. Derner · Boise, US
Christopher John Kawamura · Boise, US

Key dates

Filing date	Aug 16, 2017
Grant date	Dec 11, 2018
Priority date	—
Expiry date	Aug 16, 2037

Classification

Technology area (CPC G)Physics
CPC primaryG11C11/2257
WIPO fieldComputer technology
WIPO sectorElectrical engineering

Abstract

Apparatuses and methods are disclosed that include ferroelectric memory cells. An example ferroelectric memory cell includes two transistors and two capacitors. Another example ferroelectric memory cell includes three transistors and two capacitors. Another example ferroelectric memory cell includes four transistors and two capacitors.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.