Insulating gate separation structure and methods of making same
US10153209B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 5, 2018 |
| Grant date | Dec 11, 2018 |
| Priority date | — |
| Expiry date | Feb 5, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/32139
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
One illustrative integrated circuit product disclosed herein includes a first final gate structure, a second final gate structure and an insulating gate separation structure positioned between the first and second final gate structures. In this example, the insulating gate separation structure comprises an upper portion and a lower portion. The lower portion has a first lateral width in a first direction that is substantially uniform throughout a vertical height of the lower portion. The upper portion has a substantially uniform second lateral width in the first direction that is substantially uniform throughout a vertical height of the upper portion, wherein the second lateral width is less than the first lateral width.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.