Semiconductor structure and manufacturing method thereof
US10153218B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 16, 2017 |
| Grant date | Dec 11, 2018 |
| Priority date | — |
| Expiry date | Feb 16, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/15311
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor structure includes a die including a surface, a lid disposed over the surface of the die, and a thermally conductive material disposed between the die and the lid, wherein the lid includes a protrusion protruded towards the surface of the die and the thermally conductive material surrounds the protrusion. Also, a method of manufacturing a semiconductor structure includes providing a die including a surface, providing a lid, removing a portion of the lid to form a protrusion, disposing a thermally conductive material between the surface of the die and the lid, wherein the protrusion of the lid is surrounded by the thermally conductive material. Further, an apparatus for manufacturing a semiconductor structure and a method of manufacturing a semiconductor structure by the apparatus are disclosed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.