Interconnect structure and fabrication method thereof

US10153231B2 · kind B2 · utility

Assignee

• UNITED MICROELECTRONICS CORP. · TW

Inventors

• Ko-Wei Lin · Taichung, TW
• Hung-Miao Lin · Yuanchang, TW
• Chun-Ling Lin · Tainan, TW
• Ying-Lien Chen · Chiayi, TW
• Huei-Ru Tsai
• Sheng-Yi Su

Key dates

• Filing date: Mar 22, 2017
• Grant date: Dec 11, 2018
• Expiry date: Mar 22, 2037

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L23/53295
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

An interconnect structure includes a dielectric layer and a conductor embedded in the dielectric layer. A top surface of the conductor is flush with a top surface of the dielectric layer. A cobalt cap layer is deposited on the top surface of the conductor. A nitrogen-doped cobalt layer is disposed on the cobalt cap layer.