Light emitting diode of which an active area comprises layers of inn

US10153393B2 · kind B2 · utility

Assignees

• COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES · FR
• ALEDIA · FR

Inventors

• Ivan-Christophe Robin · Grenoble, FR
• Amélie Dussaigne · Bizonnes, FR

Key dates

• Filing date: Aug 21, 2014
• Grant date: Dec 11, 2018
• Expiry date: Aug 21, 2034

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10H20/818

Abstract

A light emitting diode including an n-doped InXnGa(1-Xn)N layer and a p-doped InXpGa(1-Xp)N layer, and an active area arranged between the InXnGa(1-Xn)N layer and the InXpGa(1-Xp)N layer including: a first InN layer with a thickness eInN106; a second InN layer with a thickness eInN108; a separating layer arranged between the InN layers and including InXbGa(1-Xb)N and a thickness <3 nm; an InX1Ga(1-X1)N layer arranged between the InXnGa(1-Xn)N layer and the first InN layer; an InX2Ga(1-X2)N layer arranged between the InXpGa(1-Xp)N layer and the second InN layer; wherein the indium compositions Xn, Xp, Xb, X1 and X2 are between 0 and about 0.25, and wherein the thicknesses eInN106 and eInN108 are such that eInN106<eInN108.