Electronic device
US10153423B2 · kind B2 · utility
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Key dates
| Filing date | Dec 15, 2017 |
| Grant date | Dec 11, 2018 |
| Priority date | — |
| Expiry date | Dec 15, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B61/22
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
An electronic device may include a semiconductor memory, and the semiconductor memory may include a free layer having a variable magnetization direction; a pinned layer having a pinned magnetization direction; a tunnel barrier layer interposed between the free layer and the pinned layer; and an under layer which is in contact with the free layer and includes a rare earth metal nitride.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.