Contact scheme for landing on different contact area levels

US10157774B1 · kind B1 · utility

Assignee

• GlobalFoundries Inc. · KY

Inventors

• Carsten Peters · Dresden, DE
• Peter Baars · Dresden, DE

Key dates

• Filing date: Jul 25, 2017
• Grant date: Dec 18, 2018
• Expiry date: Jul 25, 2037

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D30/60
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

The present disclosure relates to semiconductor structures and, more particularly, to a contact scheme for landing on different contact area levels of a semiconductor structure and methods of manufacture. The structure includes a first contact at a first level of the structure; a jumper contact at a second, upper level of the structure; an etch stop layer having an opening over the first contact and partially encapsulating the jumper contact with an opening exposing the jumper contact; and contacts in electrical contact with the first contact at the first level and the jumper contact at the second, upper level, through the openings.