Via formation using sidewall image transfer process to define lateral dimension

US10157789B2 · kind B2 · utility

Assignees

• International Business Machines Corporation · US
• GlobalFoundries Inc. · KY
• STMICROELECTRONICS, INC. · US

Inventors

• Shyng-Tsong Chen · Rensselaer, US
• Cheng Chi · Jersey City, US
• Chi-Chun Liu · Altamont, US
• Sylvie Mignot · Slingerlands, US
• Yann Mignot · Slingerlands, US
• Hosadurga Shobha · Armonk, US
• Terry A. Spooner · Clifton Park, US
• Wenhui Wang · Clifton Park, US
• Yongan Xu · Niskayuna, US

Key dates

• Filing date: Aug 17, 2016
• Grant date: Dec 18, 2018
• Expiry date: Aug 17, 2036

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L23/53266
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A method of forming a via to an underlying layer of a semiconductor device is provided. The method may include forming a pillar over the underlying layer using a sidewall image transfer process. A dielectric layer is formed over the pillar and the underlying layer; and a via mask patterned over the dielectric layer, the via mask having a mask opening at least partially overlapping the pillar. A via opening is etched in the dielectric layer using the via mask, the mask opening defining a first lateral dimension of the via opening in a first direction and the pillar defining a second lateral dimension of the via opening in a second direction different than the first direction. The via opening is filled with a conductor to form the via. A semiconductor device and via structure are also provided.