Bottom-up epitaxy growth on air-gap buffer
US10158022B2 · kind B2 · utility
2Cited by
3References
16Claims
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Key dates
| Filing date | Aug 20, 2017 |
| Grant date | Dec 18, 2018 |
| Priority date | — |
| Expiry date | Aug 20, 2037 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/50
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A fin structure for a semiconductor device, such as a FinFET structure, has first and second semiconductor layers and an air gap between the layers. The second semiconductor layer includes a recessed portion, the air gap is located in the recessed portion, and the recessed portion has an upwardly-opening acute angle in the range from about 10° to about 55°. The air gap may prevent current leakage. A FinFET device may be manufactured by first recessing and then epitaxially re-growing a source/drain fin, with the regrowth starting over a tubular air gap.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.