Rapid chamber clean using concurrent in-situ and remote plasma sources
US10161034B2 · kind B2 · utility
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8References
19Claims
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Key dates
| Filing date | Apr 21, 2017 |
| Grant date | Dec 25, 2018 |
| Priority date | — |
| Expiry date | May 12, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/335
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method for cleaning a processing chamber of a substrate processing system includes supplying nitrogen trifluoride (NF3) gas to a remote plasma source (RPS); generating RPS plasma using the RPS; supplying the RPS plasma to the processing chamber; supplying NF3 gas as bypass gas to the processing chamber; striking in-situ plasma in the processing chamber while the RPS plasma is supplied; and cleaning the processing chamber during a cleaning period using both the RPS plasma and the in-situ plasma.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.