Patent · US Active

Bonding-substrate fabrication method, bonding substrate, substrate bonding method, bonding-substrate fabrication apparatus, and substrate assembly

US10166749B2 · kind B2 · utility

2Cited by
3References
13Claims
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Key dates

Filing dateJan 30, 2012
Grant dateJan 1, 2019
Priority date
Expiry dateAug 9, 2032

Classification

  • Technology area (CPC Y)Emerging Cross-Sectional Technologies
  • CPC primaryY10T428/31678
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

[Problem] To provide a substrate bonding technique having a wide range of application. [Solution] A silicon thin film is formed on a bonding surface, and the interface with the substrate is surface-treated using energetic particles/metal particles.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.