Forming MOSFET structures with work function modification
US10170477B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 6, 2015 |
| Grant date | Jan 1, 2019 |
| Priority date | — |
| Expiry date | Mar 4, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/85
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of making a semiconductor device comprises forming a first channel region comprising a first channel region material and a second channel region comprising a second channel region material; disposing a gate dielectric on the first channel region and second channel region; depositing a work function modifying material on the gate dielectric; disposing a mask over the work function modifying material deposited on the gate dielectric disposed on the first channel region; removing the work function modifying material from the unmasked gate dielectric disposed on the second channel region; removing the mask from the work function modifying material deposited on the gate dielectric disposed on the first channel region; forming a first gate electrode on the work function modifying material deposited on the first channel region and forming a second gate electrode on the gate dielectric disposed on the second channel region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.