Semiconductor device including a resonant tunneling diode structure with electron mean free path control layers

US10170603B2 · kind B2 · utility

Assignee

• ATOMERA INCORPORATED · US

Inventors

• Robert J. Mears · Wellesley, US
• Hideki Takeuchi · Sakaki, JP
• Marek Hytha · Brookline, US

Key dates

• Filing date: Aug 7, 2017
• Grant date: Jan 1, 2019
• Expiry date: Aug 7, 2037

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D84/85

Abstract

A semiconductor device including at least one double-barrier resonant tunneling diode (DBRTD) is provided. The at least one DBRTD may include a first doped semiconductor layer, and a first barrier layer on the first doped semiconductor layer and including a superlattice. The DBRTD may further include a first intrinsic semiconductor layer on the first barrier layer, a second barrier layer on the first intrinsic semiconductor layer and also including the superlattice, a second intrinsic semiconductor layer on the second barrier layer, a third barrier layer on the second intrinsic semiconductor layer and also including the superlattice. A third intrinsic semiconductor layer may be on the third barrier layer, a fourth barrier layer may be on the third intrinsic semiconductor layer and also including the superlattice, a second doped semiconductor layer on the fourth barrier layer.